advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -100v simple drive requirement r ds(on) 160m fast switching characteristic i d -12a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as mj i ar a t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.0 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -55 to 150 linear derating factor 31.25 -55 to 150 40 -9 thermal data parameter total power dissipation operating junction temperature range storage temperature range avalanche current single pulse avalanche energy 2 continuous drain current, v gs @ 10v -10 pulsed drain current 1 -48 201022073-1/4 AP18P10GI rating -100 32 -12 0.25 rohs-compliant product g d s g d s to-220cfm(i) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial -industrial through hole applications.
AP18P10GI electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.1 - v/ : r ds(on) static drain-source on-resistance 3 v gs =-10v, i d =-8a - - 160 m v gs =-4.5v, i d =-6a - - 200 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds = -10v, i d = -8a - 8 - s i dss drain-source leakage current (t j =25 o c) v ds =-100v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 32v - - 100 na q g total gate charge 3 i d =-8a - 16 25.6 nc q gs gate-source charge v ds =-80v - 4.4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 8.7 - nc t d(on) turn-on delay time 3 v ds =-50v - 9 - ns t r rise time i d =-8a - 14 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 45 - ns t f fall time r d =6.25 -40- ns c iss input capacitance v gs =0v - 1590 2550 pf c oss output capacitance v ds =-25v - 110 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 8 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =-12a, v gs =0v - - -1.3 v t rr reverse recovery time 3 i s =-8a, v gs =0v, - 49 - ns q rr reverse recovery charge di/dt=-100a/s - 110 - nc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =-50v , l=1.0mh , r g =25 . 3.pulse test this product is an electrostatic sensitive, please handle with caution. this product has been qualified for consumer market. applications or uses as criterial component in life support device or system are not authorized. 2/4
AP18P10GI fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 120 150 180 210 240 270 300 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-8a t c =25 : 0 10 20 30 40 048121620 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -12a v g = -10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 5 10 15 20 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP18P10GI q v g -4.5v q gs q gd q g charge 0 3 6 9 12 15 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -8a 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2.5 5 7.5 10 12.5 15 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v
package outline : to-220cfm millimeters min nom max a 4.50 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 18p10gi part number logo date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 meet rohs requirement
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